Observe a folha de dados (datasheet) de um módulo bifacial monocristalino cujo modelo RSM110-8-545BMDG é dado a seguir.
ELECTRICAL DATA(STC)
Model Number | RSM110-8-530BMDG | RSM110-8-535BMDG | RSM110-8-540BMDG | RSM110-8-545BMDG | RSM110-8-550BMDG |
Rated Power in Watts-Pmax(Wp) | 530 | 535 | 540 | 545 | 550 |
Open Circuit Voltage-Voc(V) | 37.44 | 37.66 | 37.88 | 38.10 | 38.32 |
Short Circuit Current-lsc(A) | 18.02 | 18.07 | 18.13 | 18.18 | 18.23 |
Maximum Power Voltage-Vmpp(V) | 31.16 | 31.36 | 31.56 | 31.76 | 31.96 |
Maximum Power Current-Impp(A) | 17.02 | 17.07 | 17.12 | 17.17 | 17.22 |
Module Efficiency (%) ⋆ | 20.03 | 20.5 | 20.7 | 20.9 | 21.0 |
STC: Irradiance 1000 W/m2, Cell Temperature 25°C, Air Mass AM1,5 according to EN 60904-3. Bifacial factor: 70%±5 ⋆ Module Efficiency (%): Round-off to the nearest number
Electrical chacacteristics with 10% rear side power gain
Total Equivalent power -Pmax (Wp) | 583 | 589 | 594 | 600 | 605 |
Open Circuit Voltage-Voc(V) | 37.44 | 37.66 | 37.88 | 38.10 | 38.32 |
Short Circuit Current-lsc(A) | 19.82 | 19.88 | 19.94 | 20.00 | 20.05 |
Maximum Power Voltage-Vmpp(V) | 31.16 | 31.36 | 31.56 | 31.76 | 31.96 |
Maximum Power Current-Impp(A) | 18.72 | 18.78 | 18.83 | 18.89 | 18.94 |
Rear side power gain: The additional gain from the rear side compared to the power of the front side at the standard test condtion. It depends on mounting (structure, height, it angle etc.) and albedo of the ground.
Temperature Characteristics
Temperature Coefficient | Y | -0.41%/K |
Temperature Coefficient | β | -0.32%/K |
Temperature Coefficient | α | 0.050 %/K |
Considere que este módulo foi submetido a uma irradiação de 800 W∕m2 e a uma temperatura medida no módulo de 48 °C. Considere, ainda, que ele foi montado nas melhores situações.
Nestas condições a potência gerada pelo modulo é, aproximadamente, de
435 Wp.
445 Wp.
485 Wp.
494 Wp.
505 Wp.